Study on AlSb films deposited by Co-sputtering

Author

Hao, Xia ; Wu, Lili ; Huang, Zheng ; He, Jianxiong ; Feng, Lianghuan ; Zhang, Jingquan ; Li, Wei ; Cai, Yaping ; Li, Bing

Author_Institution

Coll. of Mater. Sci. & Eng., Sichuan Univ., Chengdu, China

fYear

2010

fDate

28-31 March 2010

Firstpage

1

Lastpage

3

Abstract

AlSb polycrystalline thin films were prepared by cosputtering. The structure, morphology and electrical properties of the films are studied. X-ray diffraction results show that the films are AlSb polycrystalline with a face-centered cubic structure. The use of hydrogen in the atmosphere and the higher substrate temperature are beneficial to the grain growth of the AlSb films. The intrinsic AlSb film is p-type semiconductor with the conductivity activation energy of 0.32 eV and 0.25 eV.

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; grain growth; semiconductor thin films; sputter deposition; AlSb; X-ray diffraction; co-sputtering; conductivity activation energy; electrical property; face-centered cubic structure; grain growth; p-type semiconductor; polyaystalline thin films; Atmosphere; Conductive films; Conductivity; Hydrogen; Morphology; Semiconductor films; Substrates; Temperature; Transistors; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Power and Energy Engineering Conference (APPEEC), 2010 Asia-Pacific

Conference_Location

Chengdu

Print_ISBN

978-1-4244-4812-8

Electronic_ISBN

978-1-4244-4813-5

Type

conf

DOI

10.1109/APPEEC.2010.5448879

Filename

5448879