Using Internal Quantum Efficiency to Determine Front Surface Recombination Velocity of Crystalline Silicon Solar Cells

Front surface recombination velocity of solar cells can be obtained by Internal Quantum Efficiency (IQE) in short-wavelength. However, the existing models are almost dealing with emitter region where the profile is uniformity. Doping concentration in emitter region is obeyed Gaussian or Complementary Error distribution for commercial crystalline silicon solar cells. The paper, based on current density continuity function, deduced the models of measuring front surface recombination velocity. The models adapt to the emitter region profile with Gauss and Complementary Error distribution. The range of short-wavelength is selected by diffusion junction x_n. At last, the paper using the models calculated front surface recombination velocity of different diffusion emitter and found them matched with PC ID.