Effects of increased device dissipation on haptic two-port network performance

This paper investigates the effects of increasing the haptic device´s physical dissipation on haptic two-port network (H2PN) performance. Two methods for increasing device dissipation are first explored through numerical H2PN models. Specifically, I/A (impedance/admittance) and A/I (admittance/impedance) H2PN´s with low device dissipation, increased device physical dissipation, and electrical DC motor EMF dissipation are numerically compared. Second, I/A and A/I H2PN´s with and without increased physical device dissipation are experimentally validated on HuRBiRT, a large scale haptic device with a hybrid active/passive actuated axis