Effects of increased device dissipation on haptic two-port network performance

Author

Tognetti, Lawrence J. ; Book, Wayne J.

Author_Institution

Woodruff Sch. of Mech. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2006

fDate

15-19 May 2006

Firstpage

3304

Lastpage

3311

Abstract

This paper investigates the effects of increasing the haptic device´s physical dissipation on haptic two-port network (H2PN) performance. Two methods for increasing device dissipation are first explored through numerical H2PN models. Specifically, I/A (impedance/admittance) and A/I (admittance/impedance) H2PN´s with low device dissipation, increased device physical dissipation, and electrical DC motor EMF dissipation are numerically compared. Second, I/A and A/I H2PN´s with and without increased physical device dissipation are experimentally validated on HuRBiRT, a large scale haptic device with a hybrid active/passive actuated axis

Keywords

DC motors; electric potential; force feedback; haptic interfaces; two-port networks; EMF dissipation; HuRBiRT; electrical DC motor; haptic two-port network performance; increased device dissipation; Admittance; Control systems; DC motors; Damping; Haptic interfaces; Impedance; Intelligent networks; Laboratories; Machine intelligence; Mechanical engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Robotics and Automation, 2006. ICRA 2006. Proceedings 2006 IEEE International Conference on

Conference_Location

Orlando, FL

ISSN

1050-4729

Print_ISBN

0-7803-9505-0

Type

conf

DOI

10.1109/ROBOT.2006.1642206

Filename

1642206