DocumentCode :
2104652
Title :
Investigation of the Temperature Character of IGBT Solder Delamination Based the 3-D Thermal-Electro Coupling FEM
Author :
Zheng, Libing ; Han, Li ; Liu, Jun ; Wen, Xuhui
Author_Institution :
Electr. Eng. Inst., Chinese Sci. Acad., Beijing, China
fYear :
2010
fDate :
28-31 March 2010
Firstpage :
1
Lastpage :
4
Abstract :
Solder delamination is one of the main failure modes of IGBT module. When the severity of the failure mode is different, the temperature character of IGBT is also different. This paper presents a methodology based on 3D thermal-electro coupling finite elements modeling intended to analyze the relation between the failure degree and the temperature, The results suggest when the area of solder delamination is less than 50% of solder area, IGBT modules are less likely to fail. However when the area of solder delamination is more than 50% of solder area, IGBT modules are more likely to fail. This method and the corresponding results help to evaluate this kind of failure mode how it influences the performance of IGBT, determine the failure, establish the failure standards and find the optimization of structure design.
Keywords :
delamination; finite element analysis; insulated gate bipolar transistors; optimisation; semiconductor industry; soldering; 3D thermal-electro coupling FEM; IGBT solder delamination; failure modes; finite elements modeling; insulated gate bipolar transistor; optimization; Conductivity; Delamination; Failure analysis; Finite element methods; Insulated gate bipolar transistors; Nonlinear equations; Numerical simulation; Performance analysis; Temperature distribution; Uninterruptible power systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power and Energy Engineering Conference (APPEEC), 2010 Asia-Pacific
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4812-8
Electronic_ISBN :
978-1-4244-4813-5
Type :
conf
DOI :
10.1109/APPEEC.2010.5448884
Filename :
5448884
Link To Document :
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