New aspects for investigation of carrier transition through deep levels in GaAs by a piezoelectric photoacoustic technique

Author

Fukuyama, Atsuhiko ; Iwamoto, Mitsugu ; Akashi, Y. ; Ikari, Tomofumi ; Suemitsu, M.

Author_Institution

Dept. of Appl. Phys., Miyazaki Univ., Japan

Volume

1

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

629

Abstract

The temperature variation of the piezoelectric photoacoustic (PPA) signal intensity of semi-insulating (SI) GaAs from 20 to 150 K was measured. Four distinctive peaks at 50, 70, 110 and 125 K were observed. From the theoretical analysis based on the rate equations of electrons in the conduction band and several deep levels, we concluded that two distinctive peaks at 70 and 125 K were due to the nonradiative recombination of photoexcited electrons from EL2 to EL6⁺ and EL10⁺/EL11⁺ deep levels, respectively. Deep levels with extremely low concentration (10¹²-10¹⁵ cm^-3) were clearly detected in SI-GaAs by using PPA method for the first time.

Keywords

III-V semiconductors; deep levels; electric variables measurement; electron-hole recombination; gallium arsenide; photoacoustic effect; photoexcitation; piezoelectricity; 125 K; 150 K; 50 K; 70 K; EL10⁺/EL11⁺ deep levels; EL2 to EL6⁺ deep levels; GaAs; carrier transition; deep levels; nonradiative recombination of photoexcited electrons; piezoelectric photoacoustic technique; rate equations of electrons; semiinsulating GaAs; theoretical analysis; Crystals; Electrons; Equations; Gallium arsenide; High speed integrated circuits; High speed optical techniques; Radiative recombination; Spectroscopy; Spontaneous emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1999. Proceedings. 1999 IEEE

Conference_Location

Caesars Tahoe, NV

ISSN

1051-0117

Print_ISBN

0-7803-5722-1

Type

conf

DOI

10.1109/ULTSYM.1999.849478

Filename

849478