Enhanced Light Emission from Ge Quantum Dots in Microdisks

Author

Xia, Jinsong ; Nemoto, Koudai ; Ikegami, Yuta ; Usami, Noritaka ; Shiraki, Yasuhiro

Author_Institution

Musashi Inst. of Technol., Tokyo

fYear

2007

fDate

21-25 Oct. 2007

Firstpage

664

Lastpage

665

Abstract

Ge self-assembled quantum dots embedded into microdisk resonators are fabricated by a combination of gas-source molecular beam epitaxy, electron beam lithography and reactive ion etching. Scanning electron microscopy and microphotoluminescence are used to characterize the quantum dots. Room temperature mu-PL measurements show that the light emission from Ge dots is significantly enhanced by the microdisks.

Keywords

chemical beam epitaxial growth; electron beam lithography; elemental semiconductors; germanium; photoluminescence; scanning electron microscopy; self-assembly; semiconductor growth; semiconductor quantum dots; sputter etching; Ge; electron beam lithography; gas-source molecular beam epitaxy; light emission; microdisk resonators; microphotoluminescence; reactive ion etching; scanning electron microscopy; self-assembled quantum dots; temperature 293 K to 298 K; Etching; Laser excitation; Optical pumping; Optical resonators; Plasma temperature; Pump lasers; Quantum dots; Resists; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Conference_Location

Lake Buena Vista, FL

ISSN

1092-8081

Print_ISBN

978-1-4244-0925-9

Electronic_ISBN

1092-8081

Type

conf

DOI

10.1109/LEOS.2007.4382581

Filename

4382581