Title :
A 0.3V 3.6GHz 0.3mW frequency divider with differential ED-CMOS/SOI circuit technology
Author :
Douseki, T. ; Shimamura, T. ; Shibata, N.
Author_Institution :
Microsystem Integration Labs., NTT, Atsugi, Japan
Abstract :
A differential ED-CMOS/SOI circuit combines both zero V/sub T/ CMOS/SOI and ED-MOS/SOI circuits and operates at supply voltages as low as 0.3V. An experimental frequency divider, fabricated in a 0.25/spl mu/m fully-depleted SOI process, achieves a maximum operating frequency of 3.6GHz at 0.3V and 5.4GHz at 0.5V while reducing power dissipation to less than 1 mW.
Keywords :
CMOS integrated circuits; frequency dividers; low-power electronics; silicon-on-insulator; 0.25 micron; 0.3 V; 0.3 mW; 0.5 V; 3.6 GHz; 5.4 GHz; differential ED-CMOS/SOI circuit; frequency divider; low-voltage operation; CMOS technology; Doping; Frequency conversion; Laboratories; Leakage current; Logic circuits; MOS devices; MOSFET circuits; Power dissipation; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234231
