DocumentCode :
2105117
Title :
CFD Study on Polycrystalline Silicon Chemical Vapor Deposition in a Rib Reactor
Author :
Zhang, Pan ; Wang, Wei Wen ; Wu, Yu Lei ; Chen, Guang Hui ; Li, Jian Long
Author_Institution :
Coll. of Electronmechanical Eng., QUST, Qingdao, China
fYear :
2010
fDate :
28-31 March 2010
Firstpage :
1
Lastpage :
4
Abstract :
In this study, the numerical investigation was adopted to analyze the deposition characteristic of polycrystalline silicon in a rib reactor. Fluent 6.2 was utilized to simulate the simultaneous momentum transfer, energy transfer and mass transfer, and to couple the gas-phase reaction with surface reaction in SiHC13 -H2 system. Computed flow structure, thermal and species distributions indicated that the deposition rate of polycrystalline silicon is higher but the uniformity of polycrystalline silicon and of the heat transfer are worse in the rib reactor than in a flat reactor.
Keywords :
chemical vapour deposition; computational fluid dynamics; elemental semiconductors; heat transfer; mass transfer; semiconductor growth; semiconductor thin films; silicon; surface chemistry; CFD; Si; chemical vapor deposition; computed flow structure; energy transfer; gas-phase reaction; heat transfer; mass transfer; polycrystalline silicon; rib reactor; simultaneous momentum transfer; species distributions; surface reaction; thermal distributions; Chemical vapor deposition; Computational fluid dynamics; Computational modeling; Equations; Fluid flow; Inductors; Plasma chemistry; Silicon; Solid modeling; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power and Energy Engineering Conference (APPEEC), 2010 Asia-Pacific
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4812-8
Electronic_ISBN :
978-1-4244-4813-5
Type :
conf
DOI :
10.1109/APPEEC.2010.5448901
Filename :
5448901
Link To Document :
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