DocumentCode :
2105203
Title :
Epitaxially Integrated Semiconductor Nanowires for Nanoscale Electronics, Photonics and NEMS
Author :
Islam, M. Saif
Author_Institution :
Univ. of California Davis, Davis
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
707
Lastpage :
708
Abstract :
Mass-manufacturable interfacing and integration of functional nanowires in devices and systems is the major challenge in reproducible fabrication of dense and low-cost nano-device arrays. We present an overview of our epitaxial interfacing technique for integrating semiconductor nanowires in nanodevices that not only resulted in highly reproducible and linear ohmic contacts with exceptionally low noise levels but also exhibits excellent bond strength due to a self-welding effect.
Keywords :
monolithic integrated circuits; nanoelectronics; nanowires; ohmic contacts; NEMS; bond strength; epitaxial interfacing technique; epitaxially integrated semiconductor nanowires; linear ohmic contacts; nanodevice arrays; nanoscale electronics; noise levels; self-welding effect; Electrodes; Fabrication; Insulation; Integrated circuit synthesis; Nanobioscience; Nanoelectromechanical systems; Nanoscale devices; Nanowires; Ohmic contacts; Photonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382603
Filename :
4382603
Link To Document :
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