Title :
280 GHz fT InP DHBT with 1.2 μm2 base-emitter junction area in MBE regrown-emitter technology
Author :
Wei, Yun ; Scott, Dennis W. ; Dong, Yingda ; Gossard, Arthur C. ; Rodwell, Mark I.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) with a 0.3 μm×4 μm regrown base-emitter junction. The HBT exhibits a 280 GHz current gain cutoff frequency (fτ) and 148 GHz power gain cutoff frequency (fmax). This DHBT was fabricated in a molecular beam epitaxy (MBE) regrown-emitter technology and has the highest fτ yet reported for a III-V regrown-emitter HBT. The device has VCE.sat<0.9 V even at JE=11 mA /μm2, peak AC current gain h21=30, and collector breakdown voltage VCEO=5 V. In this technology, the area of base-emitter junction has been scaled to as small as 1.2 μm2 while a larger-area extrinsic emitter contact maintains a low 11 Ω emitter access resistance.
Keywords :
III-V semiconductors; contact resistance; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; molecular beam epitaxial growth; semiconductor device breakdown; 0.3 micron; 0.9 V; 11 ohm; 148 GHz; 280 GHz; 4 micron; 5 V; DHBT base-emitter junction area; InP-InGaAs; MBE regrown-emitter technology; collector breakdown voltage; current gain cutoff frequency; double heterojunction bipolar transistor; emitter access resistance; extrinsic emitter contact; molecular beam epitaxy; power gain cutoff frequency; regrown base-emitter junction; Capacitance; Clocks; Cutoff frequency; DH-HEMTs; Germanium silicon alloys; Heterojunction bipolar transistors; Hydrogen; Indium phosphide; Molecular beam epitaxial growth; Silicon germanium;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367885
