• DocumentCode
    2105332
  • Title

    Power semiconductors for hybrid and electric vehicles

  • Author

    Graovac, D. ; Christmann, A. ; Münzer, M.

  • Author_Institution
    Infineon Technol. AG, Neubiberg, Germany
  • fYear
    2011
  • fDate
    May 30 2011-June 3 2011
  • Firstpage
    1666
  • Lastpage
    1673
  • Abstract
    The aim of this paper is to give an overview of the power semiconductor solutions for the hybrid electric vehicles, as based on the technologies existing today. First, the motivation for the electric vehicles is given, followed by the brief system overview. After that, the application specifics are discussed and mapped directly into power semiconductor requirements. Special attention is given to the IGBT based power modules. Based on the specific application a different module power ratings and technologies are proposed. A solution overview of both front-end (silicon chip) and back-end (packaging) technologies is given. Next point is the investigation of packaging and interconnection options, with quality and reliability of power modules in the focus. In the end, a future outlook, including ultra low module inductance, ultra thin wafer and SiC technology is given.
  • Keywords
    hybrid electric vehicles; insulated gate bipolar transistors; power semiconductor devices; IGBT based power modules; hybrid electric vehicles; packaging; power semiconductors; silicon chip; ultra thin wafer; Insulated gate bipolar transistors; Inverters; Mathematical model; Multichip modules; Reliability; Semiconductor diodes; Traction motors; Hybrid vehicles; IGBT; electric vehicles; power modules;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
  • Conference_Location
    Jeju
  • ISSN
    2150-6078
  • Print_ISBN
    978-1-61284-958-4
  • Electronic_ISBN
    2150-6078
  • Type

    conf

  • DOI
    10.1109/ICPE.2011.5944436
  • Filename
    5944436