DocumentCode
2105332
Title
Power semiconductors for hybrid and electric vehicles
Author
Graovac, D. ; Christmann, A. ; Münzer, M.
Author_Institution
Infineon Technol. AG, Neubiberg, Germany
fYear
2011
fDate
May 30 2011-June 3 2011
Firstpage
1666
Lastpage
1673
Abstract
The aim of this paper is to give an overview of the power semiconductor solutions for the hybrid electric vehicles, as based on the technologies existing today. First, the motivation for the electric vehicles is given, followed by the brief system overview. After that, the application specifics are discussed and mapped directly into power semiconductor requirements. Special attention is given to the IGBT based power modules. Based on the specific application a different module power ratings and technologies are proposed. A solution overview of both front-end (silicon chip) and back-end (packaging) technologies is given. Next point is the investigation of packaging and interconnection options, with quality and reliability of power modules in the focus. In the end, a future outlook, including ultra low module inductance, ultra thin wafer and SiC technology is given.
Keywords
hybrid electric vehicles; insulated gate bipolar transistors; power semiconductor devices; IGBT based power modules; hybrid electric vehicles; packaging; power semiconductors; silicon chip; ultra thin wafer; Insulated gate bipolar transistors; Inverters; Mathematical model; Multichip modules; Reliability; Semiconductor diodes; Traction motors; Hybrid vehicles; IGBT; electric vehicles; power modules;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
Conference_Location
Jeju
ISSN
2150-6078
Print_ISBN
978-1-61284-958-4
Electronic_ISBN
2150-6078
Type
conf
DOI
10.1109/ICPE.2011.5944436
Filename
5944436
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