Title :
A CPU on a glass substrate using CG-silicon TFTs
Author :
Lee, B. ; Hirayama, Y. ; Kubota, Y. ; Imai, S. ; Imaya, A. ; Katayama, M. ; Kato, K. ; Ishikawa, A. ; Ikeda, T. ; Kurokawa, Y. ; Ozaki, T. ; Mutaguch, K. ; Yamazaki, S.
Author_Institution :
Sharp, Nara, Japan
Abstract :
A CPU is produced on a glass substrate using continuous-gain silicon TFTs. Corning 1737 glass with a distortion point of 640/spl deg/C forms the glass substrate and the process temperature never exceeds 550/spl deg/C. The 8b CPU contains 13,000 TFTs and the chip area is 13/spl times/13mm/sup 2/. Operation at a frequency of 3MHz was confirmed at 5V.
Keywords :
integrated circuit packaging; microprocessor chips; thin film transistors; 3 MHz; 5 V; 550 degC; 640 degC; 8 bit; CPU; Corning 1737 glass; Si; chip area; continuous-gain silicon TFTs; distortion point; process temperature; Central Processing Unit; Glass; Liquid crystal displays; Mass production; Random access memory; Semiconductor films; Substrates; Temperature; Thin film transistors; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234250
