Title :
275 GHz fMAX, 220 GHz fT AlSb/InAs HEMT technology
Author :
Tsai, R. ; Boos, J.B. ; Bennett, B.R. ; Lange, M. ; Grundbacher, R. ; Namba, C. ; Liu, P.H. ; Lee, J. ; Barsky, M. ; Gutierrez, A.
Author_Institution :
Northrop Grumman Space Technol., Inc., Redondo Beach, CA, USA
Abstract :
In this paper, we report record AlSb/InAs HEMT high frequency gain performance up to 275 GHz fMAX. The 0.1-μm gate length and 80-μm total gate periphery devices exhibited a small-signal available gain of 10 dB at 100 GHz, and extrapolated fT and fMAX performance of 220 and 275 GHz, respectively, at a drain voltage of 0.5 V and drain current of 27 mA. To the best of our knowledge, this is the highest reported fMAX and high-frequency available gain reported for InAs-channel HEMTs. Furthermore, it is first AlSb/InAs HEMT result that has achieved fMAX greater than fT, which clearly demonstrates that this approach is not intrinsically limited in regards to achieving high frequency and high-gain characteristics.
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 0.1 micron; 0.5 V; 10 dB; 100 GHz; 220 GHz; 27 mA; 275 GHz; 80 micron; AlSb-InAs; HEMT; drain current; drain voltage; gate length; high-frequency available gain; small-signal available gain; Electron mobility; Frequency; Gain measurement; HEMTs; Indium gallium arsenide; Molecular beam epitaxial growth; Noise figure; Performance gain; Power dissipation; Voltage;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367902
