Title :
Modelling and optimising the SOI MOSFET in view of MMIC applications
Author :
Gillon, Renaud ; Raskin, J.P. ; Vanhoenacker, D. ; Colinge, J.P.
Author_Institution :
Université catholique de Louvain, Laboratoire de Microélectronique, bâtiment Maxwell, place du Levant, 3 B-1 348 Louvain-la-Neuve, Belgium. Fax: +32-10-47.87.05
Abstract :
A small-signal model based on technological parameters is validated by measurements for thin-film fully-depleted silicon-on-insulator nMOSFETs. The model is used to evaluate the impact of technological improvements and to guide the performance optimisation of the device. It is shown that the SOI nMOSFET can be expected to perform suffciently well so as to be eligible for MMIC applications up to 10 GHz.
Keywords :
Conductivity; Equivalent circuits; Insulation; MMICs; MOSFET circuits; Microwave devices; Parasitic capacitance; Silicidation; Silicon on insulator technology; Substrates;
Conference_Titel :
Microwave Conference, 1995. 25th European
Conference_Location :
Bologna, Italy
DOI :
10.1109/EUMA.1995.337018
