Erratum, Session V.A-5, replaces page 178 in the conference digest for "A low-temperature Si/SiGe impact diode for improved infrared sensing" by J.A. Meteer, S.S. Eikenberry, J.E. Huffman, E.C. Kan

SiJSiGe quantum well (QW) impact diodes are demonstrated with multiplication up to 200 at IOV reverse bias between 10-150K. These diodes are ideal gain structures for use with Si impurity band conduction (BC) i n h e d detectors, due to the available integration platform, appropriate low temperature characteristics, low voltage operation, and low noise multiplication mechanism as required for compatibility with mid- and far- infrared detection. Physical characterization,including composition and doping profiles, are obtained from STEM and SJMS analyses. Photocurrent multiplication is measured to confirm our device design.