Title :
An iterative parasitic extraction method for HEMT
Author :
Kim, Byung-Sung ; Nam, Sangwook
Author_Institution :
Dept. of Electronics Eng., Seoul National University San 56-1, Shinlim-dong, Kwanak-gu, Seoul, 151-742, Korea
Abstract :
The parasitic elements for HEMTs are extracted using an iterative technique based on the exact solution of the channel transmission equation. The proposed method uses two-point S-parameter measurements under pinched FET and normal operating gate bias conditions without hot bias measurements. Convergence is stable and the results are reliable.
Keywords :
Admittance; Electrical resistance measurement; Equations; FETs; HEMTs; Impedance; Iterative methods; MESFETs; Parasitic capacitance; Scattering parameters;
Conference_Titel :
Microwave Conference, 1995. 25th European
Conference_Location :
Bologna, Italy
DOI :
10.1109/EUMA.1995.337021
