Title :
Power loss comparison in two- and three-level PWM converters
Author :
Alemi, Payam ; Lee, Dong-Choon
Author_Institution :
Dept. of Electr. Eng., Yeungnam Univ., Gyeongsan, South Korea
fDate :
May 30 2011-June 3 2011
Abstract :
This paper presents a fair comparison of power losses in two-level and NPC three-level PWM converters using different switching devices. Conduction losses for IGBT and diode are calculated as a function of modulation index and power factor. Switching losses are calculated as a function of the switching frequency. Three level converters give a lower total power loss compared with two-level converters. Cost comparison has shown the two level configuration is about 25% cheaper than the three level configuration.
Keywords :
PWM power convertors; insulated gate bipolar transistors; power factor; power semiconductor diodes; switching convertors; IGBT; NPC three-level PWM converters; conduction loss; modulation index; power factor; power loss comparison; switching devices; switching frequency; switching loss; two-level PWM converters; Insulated gate bipolar transistors; Modulation; Reactive power; Semiconductor diodes; Switches; Switching frequency; Switching loss; Conduction loss; PWM; switching loss; three-level converters;
Conference_Titel :
Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
Conference_Location :
Jeju
Print_ISBN :
978-1-61284-958-4
Electronic_ISBN :
2150-6078
DOI :
10.1109/ICPE.2011.5944455
