DocumentCode
2105966
Title
Design and Fabrication of Integrated 1Ã\x975 Optical Phased Array Switch on InP
Author
Tanemura, T. ; Takenaka, M. ; Abdullah, A. ; Takeda, K. ; Shioda, T. ; Sugiyama, M. ; Nakano, Y.
Author_Institution
Univ. of Tokyo, Tokyo
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
780
Lastpage
781
Abstract
An integrated semiconductor 1times5 optical phased-array switch is designed and demonstrated for the first time. Using the carrier-induced refractive index change in the InGaAsP bulk layer, we achieve successful switching to five output ports with less than 60-mA current injection.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical switches; refractive index; semiconductor switches; InGaAsP; InGaAsP bulk layer; carrier-induced refractive index; integrated optical phased array switch; semiconductor optical phased-array switch; Indium phosphide; Integrated optics; Optical arrays; Optical design; Optical device fabrication; Optical refraction; Optical switches; Optical variables control; Phased arrays; Refractive index;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382640
Filename
4382640
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