DocumentCode :
2105966
Title :
Design and Fabrication of Integrated 1Ã\x975 Optical Phased Array Switch on InP
Author :
Tanemura, T. ; Takenaka, M. ; Abdullah, A. ; Takeda, K. ; Shioda, T. ; Sugiyama, M. ; Nakano, Y.
Author_Institution :
Univ. of Tokyo, Tokyo
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
780
Lastpage :
781
Abstract :
An integrated semiconductor 1times5 optical phased-array switch is designed and demonstrated for the first time. Using the carrier-induced refractive index change in the InGaAsP bulk layer, we achieve successful switching to five output ports with less than 60-mA current injection.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical switches; refractive index; semiconductor switches; InGaAsP; InGaAsP bulk layer; carrier-induced refractive index; integrated optical phased array switch; semiconductor optical phased-array switch; Indium phosphide; Integrated optics; Optical arrays; Optical design; Optical device fabrication; Optical refraction; Optical switches; Optical variables control; Phased arrays; Refractive index;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382640
Filename :
4382640
Link To Document :
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