• DocumentCode
    2106118
  • Title

    Accurate prediction of intermodulation distortion in GaAs MESFETs

  • Author

    Filicori, F. ; Vannini, G. ; Santarelli, A. ; Torcolacci, D. ; Monaco, V.A.

  • Author_Institution
    Dipartimento di Elettronica, Informatica e Sistemistica, Universitá di Bologna, Viale Risorgimento 2-40136 Bologna, Italy.
  • Volume
    2
  • fYear
    1995
  • fDate
    4-4 Sept. 1995
  • Firstpage
    625
  • Lastpage
    629
  • Abstract
    A previously proposed look-up-table based mathematical approach for the modeling of microwave active devices, the Nonlinear Integral Model, is applied for the prediction of intermodulation distortion (IMD) in GaAs MESFETs. Theoretical considerations and experimental results show that the intermodulationcharacteristics of GaAs MESFETs can be predicted with excellent accuracy by using the proposed model together with suitable electron-device-oriented interpolation techniques, directly on the bases of conventional measuremerts (DC characteristics and bias/frequency dependent small-signal S-parameters).
  • Keywords
    Accuracy; Distortion measurement; Frequency measurement; Gallium arsenide; Intermodulation distortion; Interpolation; MESFETs; Mathematical model; Microwave devices; Predictive models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1995. 25th European
  • Conference_Location
    Bologna, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1995.337036
  • Filename
    4137250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2106118