Bandwidth improvements in transimpedance amplifiers for visible-light receiver front-ends

Author

Cura, Jose Luis ; Alves, Luis Nero

Author_Institution

Dept. Electron. e Telecomun., Univ. de Aveiro, Aveiro, Portugal

fYear

2013

fDate

8-11 Dec. 2013

Firstpage

831

Lastpage

834

Abstract

This paper analyzes a method for bandwidth improvement based on a gain-bandwidth boosting technique in transimpedance amplifiers. This method is suitable for visible light receiver front-ends employing large area photodiodes, where open loop voltage gain can be optimized according to the photodiode capacitance. Theoretical results, assuming a two-pole transfer function, are compared with simulation and measurement results, using the 350nm SiGe process from AMS. Achieved results show that using this approach it is possible to reach 50MHz of bandwidth and 10KΩ maximally flat transimpedance amplifier gain with a 50pF photodiode. Power consumption (10.2mW) and noise thermal floor (2pA/√Hz) were not significantly affected.

Keywords

CMOS integrated circuits; Ge-Si alloys; operational amplifiers; optical communication; photodiodes; power consumption; transfer functions; SiGe; bandwidth improvements; capacitance 50 pF; gain bandwidth boosting technique; large area photodiodes; noise thermal floor; open loop voltage gain; photodiode capacitance; power 10.2 mW; power consumption; size 350 nm; transimpedance amplifiers; two pole transfer function; visible light receiver front ends; Bandwidth; Capacitance; Gain control; Noise; Photodiodes; Silicon germanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits, and Systems (ICECS), 2013 IEEE 20th International Conference on

Conference_Location

Abu Dhabi

Type

conf

DOI

10.1109/ICECS.2013.6815543

Filename

6815543