DocumentCode :
2106529
Title :
Strain Compensated InGaAs/GaAsP Single Quantum Well Thin Film Lasers Integrated onto Si Substrates
Author :
Cho, Sang-Yeon ; Palit, Sabarni ; Xu, Dapeng ; Tsvid, Gene ; Jokerst, Nan ; Mawst, Luke ; Kuech, Thomas
Author_Institution :
Duke Univ., Durham
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
829
Lastpage :
830
Abstract :
Thin film InGaAs/GaAsP lasers with strained single quantum well active regions have been bonded to Si and tested. The thin film laser structure was designed and grown with no net strain using strain compensation.
Keywords :
III-V semiconductors; MOCVD coatings; bonding processes; gallium compounds; indium compounds; quantum well lasers; InGaAs-GaAsP; Si; strain compensated single quantum well thin film lasers; strain compensation; strained single quantum well active region; Capacitive sensors; Chemical lasers; Etching; Indium gallium arsenide; Quantum well lasers; Semiconductor thin films; Substrates; Thin film circuits; Transistors; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382664
Filename :
4382664
Link To Document :
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