Title :
A silicon BiCMOS direct up-conversion transmitter IC for CDMA2000 with linear-in-dB power optimized RF level control
Author :
Daanen, A. ; Aggarwal, S. ; Locher, M. ; Redman-White, W. ; Charlon, O. ; Landesman, A. ; Judson, M. ; Bracey, M. ; Duperray, D. ; Razzell, C. ; Akylas, V. ; Brunel, D. ; Comte, R.
Author_Institution :
Philips Semicond., San Jose, CA, USA
Abstract :
A direct up-conversion transmitter design for CEL and PCS band CDMA cellular radio is presented. Linear-in-dB power control gives reduced supply consumption at low output levels. Current from the 2.85 V supply is 68 mA at +8 dBm and 38 mA at minimum power including both TX and RX synthesizers and TX VCO.
Keywords :
3G mobile communication; BiCMOS analogue integrated circuits; UHF frequency convertors; UHF integrated circuits; UHF oscillators; personal communication networks; radio transmitters; voltage-controlled oscillators; 2.85 V; 38 mA; 68 mA; BiCMOS direct up-conversion transmitter IC; CDMA2000; CEL band CDMA cellular radio; PCS band CDMA cellular radio; RX synthesizers; TX VCO; TX synthesizers; direct up-conversion transmitter design; linear-in-dB power optimized RF level control; low output levels; reduced supply consumption; BiCMOS integrated circuits; Land mobile radio cellular systems; Level control; Multiaccess communication; Personal communication networks; Power control; Radio frequency; Radio transmitters; Radiofrequency integrated circuits; Silicon;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234295
