Title :
Carrier leakage suppression in direct-conversion WCDMA transmitters
Author :
Brenna, G. ; Tschopp, D. ; Qiuting Huang
Author_Institution :
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
Carrier leakage suppression techniques are employed to enable direct up-conversion transmitters to meet WCDMA specifications. Implemented in 0.13/spl mu/m CMOS, the complete TX IC delivers +2.5dBm output power and consumes 45mA at 1.5V. The IC achieves +19dBm OIP3, 4.3% EVM, -38dBc ACLR and an output noise in the DCS band of -146dBm/Hz.
Keywords :
CMOS integrated circuits; code division multiple access; radio transmitters; 0.13 micron; 1.5 V; 45 mA; CMOS IC; carrier leakage suppression; direct up-conversion WCDMA transmitter; CMOS technology; Calibration; Circuits; Energy consumption; Filters; Gain control; Multiaccess communication; Transmitters; Universal Serial Bus; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234297
