InGaAsP/InP pump lasers for Tm-doped upconversion fiber lasers and film waveguides

Author

Bartha, L. ; Koltai, F. ; Püspöki, S. ; Rakovics, V. ; Serényi, M.

Author_Institution

Res. Inst. for Tech. Phys. of the HAS, Budapest, Hungary

Volume

1

fYear

1996

fDate

9-12 Oct 1996

Firstpage

197

Abstract

Low cost and reliable pump lasers were developed for blue upconversion fiber lasers and film waveguides. The recent fabrication of Tm-doped fluorocirconate (Tm:ZBLAN) glass fiber has spurred the development of blue and red fiber lasers pumped by upconversion. The performance of CW room temperature devices demonstrated to date is reviewed with emphasis on the pump sources. Spatially coherent high-power InGaAsP/InP lasers emitting at 1140 nm and 1220 nm have been fabricated by single-step growth on non-planar InP substrate. A CW power of 150 mW was measured from 750 μm long 2 μm wide cavity buried stripe lasers. Stable fundamental transverse mode operation was obtained up to 120 mW emitted power. Narrow and circular beam enables efficient (60-70%) coupling of the emitted power into single mode fiber

Keywords

III-V semiconductors; fibre lasers; gallium arsenide; indium compounds; laser modes; optical films; optical pumping; optical waveguides; semiconductor lasers; 1140 nm; 120 mW; 1220 nm; 150 mW; 2 micron; 750 micron; CW room temperature devices; III-V semiconductors; InGaAsP-InP; cavity buried stripe lasers; circular beam; fundamental transverse mode operation; optical film waveguides; pump lasers; pump sources; single mode fiber; single-step growth; spatially coherent high-power lasers; upconversion fiber lasers; Costs; Fiber lasers; Glass; Indium phosphide; Laser excitation; Laser modes; Optical device fabrication; Optical fiber devices; Pump lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1996., International

Conference_Location

Sinaia

Print_ISBN

0-7803-3223-7

Type

conf

DOI

10.1109/SMICND.1996.557340

Filename

557340