Title :
A 20 GHz bandwidth, 4 b photoconductive-sampling time-interleaved CMOS ADC
Author :
Nathawad, L.Y. ; Urata, R. ; Wooley, B.A. ; Miller, D.A.B.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
GaAs photoconductive switches are integrated with two parallel 4 b CMOS ADC channels for time-interleaved sampling of wideband signals. Peak SNDR exceeding 23 dB has been measured for inputs up to 20 GHz. Each channel dissipates 70 mW and occupies an area of 150 /spl mu/m-450 /spl mu/m in a 0.25 /spl mu/m CMOS technology.
Keywords :
CMOS integrated circuits; analogue-digital conversion; integrated optoelectronics; photoconducting switches; signal sampling; 0.25 micron; 20 GHz; 4 bit; 70 mW; CMOS ADC channels; GaAs; GaAs photoconductive switches; channel dissipation; peak SNDR; photoconductive-sampling time-interleaved CMOS ADC; time-interleaved sampling; wideband signals; Bandwidth; Capacitance; Circuits; Gallium arsenide; High speed optical techniques; Jitter; Laser mode locking; Optical switches; Photoconductivity; Sampling methods;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234316
