Author :
Nakamura, S. ; DenBaars, S.P. ; Speck, J.S. ; Schmidt, M.C. ; Kim, K.C. ; Farrell, R.M. ; Feezell, D.F. ; Cohen, D.A. ; Saito, M. ; Sato, H. ; Asamizu, H. ; Tyagi, A. ; Zhong, H. ; Masui, H. ; Fellows, N.N. ; Iza, M. ; Hashimoto, T. ; Fujito, K.
Abstract :
Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN substrates.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; semiconductor lasers; wide band gap semiconductors; GaN; LED; driving current; extended defect; external quantum efficiency; nonpolar m-plane nitride laser diodes; output power; violet light emitting diodes; Chemicals; Diode lasers; Electroluminescence; Fabrication; Gallium nitride; Laboratories; Light emitting diodes; Piezoelectric polarization; Power generation; Power lasers;
