• DocumentCode
    2107506
  • Title

    Symmetric SQW structure with low confinement factor for high power laser diodes

  • Author

    Buda, M. ; Iordache, Gh. ; Vlaicu, M. ; Cengher, D. ; Diaconescu, D.

  • Author_Institution
    Inst. of Phys. & Technol. of Mater., Acad. of Sci., Bucharest, Romania
  • Volume
    1
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    207
  • Abstract
    The paper presents a low confinement laser diode structure designed for high power operation. The attenuation coefficient is lower than 1 cm-1 and is probably due to free carrier absorption on injected carriers. The threshold current density is 800 A/cm2 and the differential efficiency is 36% (both uncoated facets) for 5 mm long devices. The internal efficiency is 50%. All values are measured in pulsed conditions (100 ns pulse width, 1 kHz repetition rate)
  • Keywords
    current density; laser cavity resonators; quantum well lasers; 100 ns; 36 percent; 5 mm; 50 percent; attenuation coefficient; confinement factor; differential efficiency; free carrier absorption; high power laser diodes; pulsed conditions; repetition rate; symmetric SQW structure; threshold current density; uncoated facets; Absorption; Diode lasers; Position measurement; Pulse measurements; Space vector pulse width modulation; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557342
  • Filename
    557342
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2107506