Title :
AlN/GaN/AlGaN Coupled Quantum Wells for Short-Wavelength Intersubband Devices
Author :
Driscoll, Kristina ; Bhattacharyya, Anirban ; Moustakas, Theodore D. ; Paiella, Roberto
Author_Institution :
Boston Univ., Boston
Abstract :
We demonstrate efficient interwell optical coupling in AIN/GaN/AlGaN double quantum wells grown by molecular beam epitaxy, where the coupling strength is controlled through the Al content of the inner barrier.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; optical couplers; semiconductor quantum wells; wide band gap semiconductors; AlN-GaN-AlGaN; double quantum wells; interwell optical coupling; molecular beam epitaxy; short-wavelength intersubband devices; Aluminum gallium nitride; Frequency conversion; Gallium nitride; Infrared spectra; Nonlinear optics; Optical coupling; Optical pumping; Optical saturation; Optical scattering; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382700
