Applications of silicon carbide power devices in three-phase voltage-fed induction motor drives for electric vehicles

Author

Das, Nisha ; Kazimierczuk, Marian K.

Author_Institution

Wright State Univ., Dayton, OH

fYear

2007

fDate

22-24 Oct. 2007

Firstpage

278

Lastpage

285

Abstract

The performance of the three-phase voltage-fed induction motor drives with SiC Schottky diodes operating in 180deg mode and 120deg mode is studied. The Cree SiC Schottky diodes CSD10060 with the reverse breakdown voltage V_BR = 600 V and the maximum forward current Ipmia = 8 A are used. The inverter efficiency in 180deg mode operation is compared with that in 120deg mode operation by obtaining the losses in the circuit using PSpice simulations. The behavior of MOSFETs as well as the diodes in the inverter circuit operating at 180deg mode and 120deg mode is studied extensively using PSpice simulations.

Keywords

Schottky diodes; electric vehicles; induction motor drives; invertors; power MOSFET; power semiconductor diodes; silicon compounds; MOSFET; PSpice simulations; Schottky diodes; SiC; current 8 A; electric vehicles; inverter circuit; inverter efficiency; maximum forward current; reverse breakdown voltage; silicon carbide power devices; three-phase voltage-fed induction motor drives; voltage 600 V; Circuits; Electric vehicles; Induction motor drives; Induction motors; MOSFETs; Pulse width modulation inverters; Schottky diodes; Silicon carbide; Synchronous motors; Voltage; Induction-motor drives; silicon carbide Schottky diodes; three-phase variable-speed inverters;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation Conference and Electrical Manufacturing Expo, 2007

Conference_Location

Nashville, TN

Print_ISBN

978-1-4244-0446-9

Electronic_ISBN

978-1-4244-0447-6

Type

conf

DOI

10.1109/EEIC.2007.4562632

Filename

4562632