Title :
Improved Photoluminescence of InGaN Quantum Wells Grown on Nano-Patterned AGOG Sapphire Substrate by Metalorganic Vapor Phase Epitaxy
Author :
Ee, Yik-Khoon ; Arif, Ronald A. ; Tansu, Nelson ; Li, Hongwei ; Chan, Helen M. ; Vinci, Richard P. ; Capek, Pavel ; Jha, Naveen K. ; Dierolf, Volkmar
Author_Institution :
Lehigh Univ., Bethlehem
Abstract :
Metalorganic vapor phase epitaxy of InGaN quantum wells on GaN template grown on nano-patterned AGOG sapphire substrate leads to improved luminescence intensity by 1.89-2.21-times, presumably due to the reduced defect density.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; vapour phase epitaxial growth; InGaN; metalorganic vapor phase epitaxy; nano-patterned AGOG sapphire substrate; photoluminescence; quantum wells; Aluminum oxide; Epitaxial growth; Epitaxial layers; Gallium nitride; Light emitting diodes; Materials science and technology; Optical materials; Photoluminescence; Scanning electron microscopy; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382701
