Investigation of Excitonic Effects in Polar InGaN/GaN Quantum Heterostructures for Enhanced Quantum Electroabsorption in Blue

Author

Sari, Emre ; Nizamoglu, Sedat ; Ozel, Tuncay ; Koc, Asli ; Lee, In-Hwan ; Baek, Jong Hyeob ; Demir, Hilmi Volkan

Author_Institution

Bilkent Univ., Ankara

fYear

2007

fDate

21-25 Oct. 2007

Firstpage

904

Lastpage

905

Abstract

This work investigates the strong quantum electroabsorption behavior in polar InGaN/GaN quantum heterostructures by carefully designing and controlling the quantum structure parameters and thus obtaining strong excitonic effects for the end goal of making a high-performance quantum electroabsorption modulator in blue. This is due to the reversed quantum confined Stark effect with the realization of 4 nm/4 nm InGaN/GaN structure.

Keywords

III-V semiconductors; electroabsorption; excitons; gallium compounds; indium compounds; quantum confined Stark effect; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; exciton; quantum electroabsorption; quantum heterostructures; quantum structure parameters; reversed quantum confined Stark effect; Charge carrier processes; Electronics industry; Electrostatics; Excitons; Gallium nitride; Industrial electronics; Photonics; Physics; Piezoelectric polarization; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Conference_Location

Lake Buena Vista, FL

ISSN

1092-8081

Print_ISBN

978-1-4244-0925-9

Electronic_ISBN

1092-8081

Type

conf

DOI

10.1109/LEOS.2007.4382702

Filename

4382702