Title :
Investigation of Excitonic Effects in Polar InGaN/GaN Quantum Heterostructures for Enhanced Quantum Electroabsorption in Blue
Author :
Sari, Emre ; Nizamoglu, Sedat ; Ozel, Tuncay ; Koc, Asli ; Lee, In-Hwan ; Baek, Jong Hyeob ; Demir, Hilmi Volkan
Author_Institution :
Bilkent Univ., Ankara
Abstract :
This work investigates the strong quantum electroabsorption behavior in polar InGaN/GaN quantum heterostructures by carefully designing and controlling the quantum structure parameters and thus obtaining strong excitonic effects for the end goal of making a high-performance quantum electroabsorption modulator in blue. This is due to the reversed quantum confined Stark effect with the realization of 4 nm/4 nm InGaN/GaN structure.
Keywords :
III-V semiconductors; electroabsorption; excitons; gallium compounds; indium compounds; quantum confined Stark effect; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; exciton; quantum electroabsorption; quantum heterostructures; quantum structure parameters; reversed quantum confined Stark effect; Charge carrier processes; Electronics industry; Electrostatics; Excitons; Gallium nitride; Industrial electronics; Photonics; Physics; Piezoelectric polarization; Tunneling;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382702
