• DocumentCode
    2107599
  • Title

    Ultraviolet Stimulated Emission with a Low Lasing Threshold from ZnO Thin Films grown by Atomic Layer Deposition

  • Author

    Chen, M.J. ; Chen, H.C. ; Wu, M.K. ; Cheng, Y.C. ; Tsai, F.Y.

  • Author_Institution
    Nat. Taiwan Univ., Taipei
  • fYear
    2007
  • fDate
    21-25 Oct. 2007
  • Firstpage
    906
  • Lastpage
    907
  • Abstract
    ZnO thin films were grown on sapphire substrates by atomic layer deposition (ALD) followed with high-temperature post-annealing. A low threshold for the onset of stimulated emission was observed at excitation intensity of 49.2 kW/cm2.
  • Keywords
    II-VI semiconductors; annealing; atomic layer deposition; semiconductor thin films; stimulated emission; zinc compounds; Al2O3; ZnO; atomic layer deposition; high-temperature post-annealing; low lasing threshold; sapphire substrates; thin film growth; ultraviolet stimulated emission; Atomic layer deposition; Chemical vapor deposition; Crystallization; Laser excitation; Materials science and technology; Molecular beam epitaxial growth; Sputtering; Stimulated emission; Substrates; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-0925-9
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2007.4382703
  • Filename
    4382703
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2107599