Title :
A SiGe low noise amplifier for 2.4/5.2/5.7 GHz WLAN applications
Author :
Po-Wei Lee ; Hung-Wei Chiu ; Tien-Ling Hsieh ; Chih-Hsien Shen ; Guo-Wei Huang ; Shey-Shi Lu
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A 355 /spl mu/m /spl times/ 155 /spl mu/m LNA in 0.35 /spl mu/m SiGe BiCMOS uses a simple bias switching technique to operate in all three WLAN bands. Noise figure is 2.73 dB at 2 V. Measurements of S parameters, power gain and collector current are also reported.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; S-parameters; UHF amplifiers; UHF integrated circuits; integrated circuit noise; wireless LAN; 0.35 /spl mu/m SiGe BiCMOS; 0.35 micron; 155 micron; 2 V; 2.4 GHz; 2.73 dB; 355 micron; 5.2 GHz; 5.7 GHz; S parameters; SiGe; SiGe low noise amplifier; WLAN applications; WLAN bands; bias switching technique; collector current; power gain; BiCMOS integrated circuits; Current measurement; Gain measurement; Germanium silicon alloys; Low-noise amplifiers; Noise figure; Noise measurement; Power measurement; Silicon germanium; Wireless LAN;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234337
