Title :
Effect of SiC schottky and Si junction diode reverse recovery on boost converter
Author :
Galigekere, Veda Prakash ; Kazimierczuk, Marian K.
Author_Institution :
Wright State Univ., Dayton, OH
Abstract :
The effect of diode reverse recovery on the performance of a pulse-width modulated (PWM) dc-dc boost converter employed for active power- factor correction (PFC) is analyzed. A 250 W boost converter is designed as per the requirements of a power-factor-corrector circuit and simulated using PSPICE. The effect of the diode reverse-recovery current on the MOSFET, employed as the switch in boost PFC circuit, is analyzed and depicted by the aid of simulated waveforms. The performance of three similarly rated diodes: CSD100600 silicon carbide Schottky diode, ultra-fast recovery silicon junction diode MUR1S60, and soft-recovery silicon junction diode MSR860 are compared and the simulation results are presented.
Keywords :
DC-DC power convertors; MOSFET circuits; SPICE; power convertors; power factor correction; semiconductor diodes; MOSFET; PSPICE; boost converter; diode reverse recovery; power 250 W; power- factor correction; pulse-width modulated dc-dc boost converter; silicon carbide Schottky diode; simulated waveforms; ultra-fast recovery silicon junction diode; Circuit simulation; DC-DC power converters; MOSFET circuits; Performance analysis; Pulse width modulation; Pulse width modulation converters; SPICE; Schottky diodes; Silicon carbide; Switches; Boost DC-DC Converter; Power-Factor Correction (PFC); Silicon Carbide Schottky Diodes; Silicon Junction Diodes; Soft-Recovery Diodes; Ultra-fast Recovery Diodes;
Conference_Titel :
Electrical Insulation Conference and Electrical Manufacturing Expo, 2007
Conference_Location :
Nashville, TN
Print_ISBN :
978-1-4244-0446-9
Electronic_ISBN :
978-1-4244-0447-6
DOI :
10.1109/EEIC.2007.4562634
