Carbon nanotube field effect transistors - fabrication, device physics, and circuit implications

Author

Wong, H.-S.P. ; Appenzeller, J. ; Derycke, V. ; Martel, R. ; Wind, S. ; Avouris, P.

Author_Institution

IBM Res., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2003

fDate

13-13 Feb. 2003

Firstpage

370

Abstract

The device and circuit implications of carbon nanotube field effect transistors (CNFET) as a logic technology are assessed. The salient device characteristics and fabrication techniques are described based on measured device parameters. The device/circuit performance of CNFET are estimated and the key technical challenges to developing the CNFET as a logic technology are discussed.

Keywords

carbon nanotubes; field effect logic circuits; field effect transistors; nanotube devices; C; carbon nanotube field effect transistors; circuit implications; device implications; device physics; fabrication techniques; logic technology; CNTFETs; Carbon nanotubes; Circuits; Contact resistance; Current measurement; Dielectrics; FETs; Fabrication; Physics; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-7707-9

Type

conf

DOI

10.1109/ISSCC.2003.1234339

Filename

1234339

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2107669