Title :
Carbon nanotube field effect transistors - fabrication, device physics, and circuit implications
Author :
Wong, H.-S.P. ; Appenzeller, J. ; Derycke, V. ; Martel, R. ; Wind, S. ; Avouris, P.
Author_Institution :
IBM Res., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The device and circuit implications of carbon nanotube field effect transistors (CNFET) as a logic technology are assessed. The salient device characteristics and fabrication techniques are described based on measured device parameters. The device/circuit performance of CNFET are estimated and the key technical challenges to developing the CNFET as a logic technology are discussed.
Keywords :
carbon nanotubes; field effect logic circuits; field effect transistors; nanotube devices; C; carbon nanotube field effect transistors; circuit implications; device implications; device physics; fabrication techniques; logic technology; CNTFETs; Carbon nanotubes; Circuits; Contact resistance; Current measurement; Dielectrics; FETs; Fabrication; Physics; Silicon;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234339
