SiGe pin-photodetectors integrated on silicon substrates for optical fiber links

Author

Wohl, G. ; Parry, C. ; Kasper, E. ; Jutzi, M. ; Berroth, M.

Author_Institution

Inst. of Semicond. Eng., Stuttgart Univ., Germany

fYear

2003

fDate

13-13 Feb. 2003

Firstpage

374

Abstract

100% Ge pin-photodetectors grown on SiGe strain relaxed buffer (SRB) layers are presented, For integrated detectors the SRB layer growth as well as the subsequent SiGe photodiode technology processing must be compatible with standard CMOS technology. DC photoresponsivities of 145 mA/W at 1.3 /spl mu/m and 25 mA/W at 1.55 /spl mu/m can be achieved. In first experiments the 100% Ge pin-photodetector exhibits an RC limited 3-dB opto-electrical bandwidth of 0.9 GHz.

Keywords

CMOS integrated circuits; Ge-Si alloys; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; 0.9 GHz; 1.3 micron; 1.55 micron; CMOS technology compatibility; DC photoresponsivities; RC limited 3-dB opto-electrical bandwidth; Si; Si substrates; SiGe; SiGe photodiode technology processing; SiGe pin-photodetectors; SiGe strain relaxed buffer layers; integrated detectors; optical fiber links; Buffer layers; CMOS technology; Germanium silicon alloys; Optical buffering; Optical fiber communication; Optical fibers; Photodetectors; Photodiodes; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-7707-9

Type

conf

DOI

10.1109/ISSCC.2003.1234341

Filename

1234341