Title :
Analysis of High Temperature Characteristics of an IEC-GCT
Author :
Fu Kai ; Wang Cailin ; Gao Yong ; Hu Minxiao
Author_Institution :
Dept. of Autom. & Inf. Eng., Xi´an Univ. of Technol., Xi´an, China
Abstract :
Structure features and operation mechanism of an injection efficiency controlled (IEC) GCT are analyzed. The influences of temperature on the characteristics of IEC-GCT device are discussed. The blocking, conducting and switching characteristics of IEC-GCT at high temperature is simulated by ISE simulator. The results show that, with the rise of temperature, IEC-GCT blocking voltage increases firstly and then decreases, on-state voltage drop increases and switching time becomes the longer. Compared with the SA-GTO, IEC-GCT device has the better conducting and turn-on characteristics. Lastly, the safe operation area (SOA) of IEC-GCT device is analyzed, and the improvement measures of SOA of IEC-GCT device are given.
Keywords :
high-temperature electronics; switching; thyristors; IEC-GCT; blocking characteristics; conducting characteristics; injection efficiency controlled-gate commutated thyristor; safe operation area; switching characteristics; Anodes; Area measurement; Electrons; Equivalent circuits; Information analysis; Power semiconductor devices; Semiconductor optical amplifiers; Temperature; Thyristors; Voltage;
Conference_Titel :
Power and Energy Engineering Conference (APPEEC), 2010 Asia-Pacific
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4812-8
Electronic_ISBN :
978-1-4244-4813-5
DOI :
10.1109/APPEEC.2010.5449012
