Implementation of diagnostics functions in the IGBT drivers, part 1. — Diagnostics

Author

Knobloch, J. ; Klima, B. ; Nouman, Z. ; Pochyla, M.

Author_Institution

Dept. of Power Electr. & Electron. Eng., Brno Univ. of Technol., Brno, Czech Republic

fYear

2011

fDate

5-8 Sept. 2011

Firstpage

145

Lastpage

148

Abstract

The paper deals with possibilities of power IGBT transistor diagnostics directly in driver of voltage source inverters. It is necessary to implement the diagnostics circuits as close as possible to the power IGBT transistor due to high demands on drive reliability and failure predictability in many applications.

Keywords

charge measurement; electric current measurement; insulated gate bipolar transistors; invertors; power bipolar transistors; semiconductor device reliability; IGBT drivers; IGBT technical state; current measurement; diagnostics circuits; diagnostics functions; diagnostics quantities measurements; downgrading progress monitoring; drive maintenance planning; drive reliability; driver secondary side supply voltages; failure predictability; gate charge measurement; off-state voltage; on-state saturation voltage; power IGBT transistor diagnostics; transistor chip temperature; voltage overshoot size; voltage source inverters; Current measurement; Insulated gate bipolar transistors; Inverters; Semiconductor device measurement; Temperature measurement; Transistors; Voltage measurement; IGBT driver; diagnostics; power transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Diagnostics for Electric Machines, Power Electronics & Drives (SDEMPED), 2011 IEEE International Symposium on

Conference_Location

Bologna

Print_ISBN

978-1-4244-9301-2

Electronic_ISBN

978-1-4244-9302-9

Type

conf

DOI

10.1109/DEMPED.2011.6063615

Filename

6063615