DocumentCode
2107883
Title
A multi-stack quantum barrier varactor on InP for MM-wave frequency tripling
Author
Rahal, Ali ; Bosislo, Renato G ; Rogers, Chris ; Ovey, John ; Missous, M.
Author_Institution
Elec Eng Dep, Ecole Polytechnique de Montreal, CP 6079, Succ "Centre Ville", Montreal, H3C 3A7, Canada
Volume
2
fYear
1995
fDate
4-4 Sept. 1995
Firstpage
981
Lastpage
984
Abstract
Conventional Multi-Stack Quantum Barrier Varactor (MS-OBV) diodes on GaAs suffer from leaky barriers and low breakdown voltages which limits their performance in high power applications. Using a lattice matched InGaAs/InAIAs/InGaAs barriers on InP we have grown a 10 stack device wih a very low leakage current and high breakdown voltage. Measurements show a very low series resistance of 1.2 ¿ with breakdown voltage reaching up to 22 volts. The power capability of this new diode has been investigated by simulations and measurements. The obtained results indicate a good agreement with 22 dBm at 60 GHz and 19.6 dBm at 93 GHz with no saturation effect observed in leaky barrier devices.
Keywords
Breakdown voltage; Diodes; Electrical resistance measurement; Frequency; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Leakage current; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1995. 25th European
Conference_Location
Bologna, Italy
Type
conf
DOI
10.1109/EUMA.1995.337109
Filename
4137323
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