Title :
A System For 3 D Simulations Of Complex Si And Heterostructure Devices
Author :
Conti, Paolo ; Tomizawa, Masaaki ; Yoshii, Akira
Author_Institution :
NTT LSI Laboratories
Keywords :
Assembly; Capacitance; Computational modeling; Geometry; Large scale integration; MOSFET circuits; Mesh generation; Poisson equations; Solid modeling; Wire;
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
DOI :
10.1109/VPAD.1993.724703
