Title :
Schottky barrier on the InGaAs/InP heterostructures grown by the CL-VPE technique for photodetectors
Author :
Rusu, Emil ; Budianu, Elena ; Nan, Stelian ; Purica, Munizer
Author_Institution :
IFA, Chisinev, Moldova
Abstract :
The Schottky barriers of Ag, Ti, Ni, on n and p iso-type heterostructures of In0.53Ga0.47As/InP, grown by the CL-VPE technique, have shown that values of 0.6 eV for Ag/p-InGaAs barrier height and of 0.46 eV on n-InGaAs, by growing an n-InP interlayer may be obtained
Keywords :
III-V semiconductors; Schottky barriers; gallium arsenide; indium compounds; nickel alloys; photodetectors; semiconductor-metal boundaries; silver alloys; titanium alloys; vapour phase epitaxial growth; 0.46 eV; 0.6 eV; AgPbAu-InGaAs-InP; Cl-VPE technique; III-V semiconductors; NiPbAu-InGaAs-InP; Schottky barrier; TiPdAu-InGaAs-InP; barrier height; iso-type heterostructures; photodetectors; Indium gallium arsenide; Indium phosphide; Photodetectors; Schottky barriers;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557344
