DocumentCode :
2108054
Title :
Design of experiments using a physical model
Author :
Atherton, John S. ; Snowden, Christopher M. ; Pollard, Roger D.
Author_Institution :
Microwave and Terahertz Technology, Group, Department of Electronic and Electrical Engineering, University of Leeds, Leeds. United Kingdom.
Volume :
2
fYear :
1995
fDate :
4-4 Sept. 1995
Firstpage :
1017
Lastpage :
1022
Abstract :
This paper describes the use of the Design of Experiments (DOE) technique with an accurate and efficient physical model. This approach allows for the systematic study of the effects of device geometry and process variations on electrical performance and demonstrates efficiently which parameters have the largest effect on device performane as well as showing any significant interaction between the effects. The model is used to show the variation in performance for a double recessed device.
Keywords :
Circuit simulation; FETs; Frequency; Geometry; Scattering parameters; Semiconductor device modeling; Semiconductor process modeling; Solid modeling; Table lookup; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1995. 25th European
Conference_Location :
Bologna, Italy
Type :
conf
DOI :
10.1109/EUMA.1995.337116
Filename :
4137330
Link To Document :
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