DocumentCode
2108054
Title
Design of experiments using a physical model
Author
Atherton, John S. ; Snowden, Christopher M. ; Pollard, Roger D.
Author_Institution
Microwave and Terahertz Technology, Group, Department of Electronic and Electrical Engineering, University of Leeds, Leeds. United Kingdom.
Volume
2
fYear
1995
fDate
4-4 Sept. 1995
Firstpage
1017
Lastpage
1022
Abstract
This paper describes the use of the Design of Experiments (DOE) technique with an accurate and efficient physical model. This approach allows for the systematic study of the effects of device geometry and process variations on electrical performance and demonstrates efficiently which parameters have the largest effect on device performane as well as showing any significant interaction between the effects. The model is used to show the variation in performance for a double recessed device.
Keywords
Circuit simulation; FETs; Frequency; Geometry; Scattering parameters; Semiconductor device modeling; Semiconductor process modeling; Solid modeling; Table lookup; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1995. 25th European
Conference_Location
Bologna, Italy
Type
conf
DOI
10.1109/EUMA.1995.337116
Filename
4137330
Link To Document