DocumentCode :
2108186
Title :
Simulation Of ULSI Silicon MOSFETs
Author :
Pinto, M.R. ; Bude, J. ; Rafferty, C.S.
Author_Institution :
AT&T Bell Laboratories
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
22
Lastpage :
25
Keywords :
Boron; Computational modeling; Implants; MOS devices; MOSFETs; Predictive models; Semiconductor process modeling; Silicon; Tunneling; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724707
Filename :
724707
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2108186
بازگشت