DocumentCode

2108319

Title

Robust Simulation Of GaAs Devices Using Energy Transport Model

Author

So, Lydia L. ; Chen, Datong ; Yu, Zhiping ; Dutton, Robert W.

Author_Institution

Stanford University

fYear

1993

fDate

14-15 May 1993

Firstpage

32

Lastpage

33

Keywords

Circuit simulation; Diodes; Electrons; Energy conservation; Energy loss; Equations; Fitting; Gallium arsenide; Robustness; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on

Print_ISBN

0-7803-1338-0

Type

conf

DOI

10.1109/VPAD.1993.724711

Filename

724711