DocumentCode :
2108319
Title :
Robust Simulation Of GaAs Devices Using Energy Transport Model
Author :
So, Lydia L. ; Chen, Datong ; Yu, Zhiping ; Dutton, Robert W.
Author_Institution :
Stanford University
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
32
Lastpage :
33
Keywords :
Circuit simulation; Diodes; Electrons; Energy conservation; Energy loss; Equations; Fitting; Gallium arsenide; Robustness; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724711
Filename :
724711
Link To Document :
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