DocumentCode :
2108401
Title :
An Efficient Impact Ionization Model For Silicon Monte Carlo Simulation
Author :
Yao, C.-S. ; Chen, D. ; Dutton, R.W. ; Venturi, F. ; Sangiorgi, E. ; Abramo, A.
Author_Institution :
Stanford University
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
42
Lastpage :
43
Keywords :
Acoustic scattering; Brillouin scattering; Deformable models; Electrons; Impact ionization; Integrated circuit modeling; Optical scattering; Optical surface waves; Particle scattering; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724715
Filename :
724715
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2108401
