DocumentCode
2108498
Title
A K-Band monolithic HEMT medium power amplifier
Author
Siweris, H.J. ; Grave, T. ; Schleicher, L. ; Riechert, H. ; Muller, J.-E. ; Kellner, W.
Author_Institution
Siemens AG, Corporate Research and Development, D-81730 Munich, Germany. Tel.: +49-89-63641035, Fax: +49-89-63640822
Volume
2
fYear
1995
fDate
4-4 Sept. 1995
Firstpage
1105
Lastpage
1109
Abstract
Design, fabrication technology, and measured performance of a monolithic medium power amplifier are described. The circuit consists of four amplifier stages and operates over the 17 - 26 GHz frequency range. The impact of bond wires for hybrid mounting was taken into account in the circuit design. The MMIC was fabricated with a pseudomorphic HEMT technology requiring no electron beam lithography. More than 25 dB small-signal gain, 24 dBm output power, and an overall efficiency of 15 % have been obtained over the entire frequency range.
Keywords
Bonding; Circuit synthesis; Fabrication; Frequency; HEMTs; K-band; MMICs; Power amplifiers; Power measurement; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1995. 25th European
Conference_Location
Bologna, Italy
Type
conf
DOI
10.1109/EUMA.1995.337134
Filename
4137348
Link To Document