DocumentCode
2108548
Title
Effect of γ-irradiation on photoluminescence of porous silicon
Author
Astrova, E.V. ; Emtsev, V.V. ; Lebedev, A.A. ; Poloskin, D.S. ; Remenyuk, A.D. ; Rud, Yu.V. ; Vitman, R.F.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Volume
1
fYear
1996
fDate
9-12 Oct 1996
Firstpage
221
Abstract
Properties of Porous Silicon (PS) subjected to gamma irradiation in an air ambient and in vacuum have been studied. Gamma-irradiation was carried out in usual room atmosphere, and in evacuated tubes. The samples of porous silicon were investigated by means of photoluminescence (PL) and infrared (IR) absorption. IR absorption measurements showed variations of the intensity of Si-H and Si-O bands with the irradiation dose
Keywords
elemental semiconductors; gamma-ray effects; infrared spectra; photoluminescence; porous materials; silicon; γ-irradiation; Si; infrared absorption; photoluminescence; porous Si; Photoluminescence; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557346
Filename
557346
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