60GHz and 76GHz oscillators in 0.25/spl mu/m SiGe:C BiCMOS

Author

Winkler, W. ; Borngraber, J. ; Heinemann, B. ; Weger, P.

Author_Institution

IHP, Frankfurt, Germany

fYear

2003

fDate

13-13 Feb. 2003

Firstpage

454

Abstract

A 60GHz VCO and 76GHz oscillator with integrated resonators are fabricated in a 0.25/spl mu/m SiGe:C BiCMOS technology. The circuits are suitable for millimeter wave systems including the 60GHz ISM band for broadband communication and the 76-77GHz region for automotive radar. Results derived from on-wafer measurements and mm-wave modules show wide tuning range and low phase noise.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MIMIC; carbon; circuit tuning; millimetre wave oscillators; phase noise; semiconductor materials; voltage-controlled oscillators; 0.25 micron; 60 GHz; 76 GHz; ISM band; SiGe:C; SiGe:C BiCMOS technology; VCO; automotive radar; broadband communication; integrated resonator; millimeter-wave mode; oscillator; phase noise; tuning range; Automotive engineering; BiCMOS integrated circuits; Broadband communication; Integrated circuit technology; Millimeter wave communication; Millimeter wave integrated circuits; Millimeter wave measurements; Millimeter wave radar; Millimeter wave technology; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-7707-9

Type

conf

DOI

10.1109/ISSCC.2003.1234384

Filename

1234384