Title :
A 1.5V 1.7ns 4k /spl times/ 32 SRAM with a fully-differential auto-power-down current sense amplifier
Author :
Wicht, B. ; Larguier, J.-Y. ; Schmitt-Landsiedel, D.
Author_Institution :
Tech. Univ. Munich, Germany
Abstract :
A fully-differential current sense amplifier operates as low as 0.7V, automatically turns off after reading and features fast precharge. An implementation of a 1.5V 4k /spl times/ 32 dual-port SRAM macro in a 130nm CMOS process achieves an access time of 1.7ns.
Keywords :
CMOS memory circuits; SRAM chips; differential amplifiers; low-power electronics; 1.5 V; 1.7 ns; 130 nm; CMOS process; dual-port SRAM macro; fully-differential auto-power-down current sense amplifier; Capacitance; Circuits; Decoding; Differential amplifiers; Energy consumption; Latches; Multiplexing; Partial discharges; Random access memory; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234387
