Title :
Modelling of Schottky varactors for NLTL applications
Author :
Heymann, Peter ; Prinzler, Helmut ; Langer, Thomas ; Doerner, Ralf
Author_Institution :
Ferdinand-Braun-Institut fÿr Höchstfrequenztechnik Berlin D-12489, Berlin, Rudower Chaussee 5
Abstract :
A new physical model of millimeter-wave Schottky varactors with hyperabrupt doping profile is presented. The bias dependent capacitance and series resistance can be calculated from technological parameters. Analytical formulas for C(V) and Rs(V) for exponentially graded profiles have been verified for varactors of different size and doping profiles which are designed for the integration in coplanar nonlinear transmission lines. The modeling results are compared in detail with on-wafer impedance measurements of a 280¿m2 GaAs Schottky diode in reverse and forward bias range up to 110GHz.
Keywords :
Capacitance; Charge carrier density; Coplanar waveguides; Doping profiles; MOCVD; Schottky barriers; Schottky diodes; Semiconductor process modeling; Varactors; Voltage;
Conference_Titel :
Microwave Conference, 1995. 25th European
Conference_Location :
Bologna, Italy
DOI :
10.1109/EUMA.1995.337143
