• DocumentCode
    2108742
  • Title

    Modelling of Schottky varactors for NLTL applications

  • Author

    Heymann, Peter ; Prinzler, Helmut ; Langer, Thomas ; Doerner, Ralf

  • Author_Institution
    Ferdinand-Braun-Institut fÿr Höchstfrequenztechnik Berlin D-12489, Berlin, Rudower Chaussee 5
  • Volume
    2
  • fYear
    1995
  • fDate
    4-4 Sept. 1995
  • Firstpage
    1146
  • Lastpage
    1149
  • Abstract
    A new physical model of millimeter-wave Schottky varactors with hyperabrupt doping profile is presented. The bias dependent capacitance and series resistance can be calculated from technological parameters. Analytical formulas for C(V) and Rs(V) for exponentially graded profiles have been verified for varactors of different size and doping profiles which are designed for the integration in coplanar nonlinear transmission lines. The modeling results are compared in detail with on-wafer impedance measurements of a 280¿m2 GaAs Schottky diode in reverse and forward bias range up to 110GHz.
  • Keywords
    Capacitance; Charge carrier density; Coplanar waveguides; Doping profiles; MOCVD; Schottky barriers; Schottky diodes; Semiconductor process modeling; Varactors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1995. 25th European
  • Conference_Location
    Bologna, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1995.337143
  • Filename
    4137357
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2108742